Download Bias Temperature Instability for Devices and Circuits by Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.) PDF

By Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)

This ebook presents a single-source connection with one of many more difficult reliability concerns plaguing glossy semiconductor applied sciences, unfavorable bias temperature instability. Readers will take advantage of state-of-the artwork insurance of study in themes resembling time established disorder spectroscopy, anomalous disorder habit, stochastic modeling with extra metastable states, multiphonon concept, compact modeling with RC ladders and implications on equipment reliability and lifetime.

Show description

Read Online or Download Bias Temperature Instability for Devices and Circuits PDF

Similar circuits books

Phase-Lock Basics

Targeting second-order loops, this advent to ideas that may be utilized to quite a lot of section- locked loop circuits is supplemented through a few MATLABR simulation routines that permit the reader to extend his or her wisdom of the circuit layout method. Twenty chapters discover such subject matters as: loop elements, reaction, and balance; brief and modulation reaction; acquisition; section modulation through noise; reaction to noise modulation, illustration of and loop reaction to additive noise; and parameter version, nonlinear operation, and cycle skipping because of noise.

Physical Design Automation of Vlsi Systems

Booklet via Preas, Bryan T. , Lorenzetti, Michael

Understanding Signal Integrity

A key element of circuit board layout, sign integrity (SI) refers back to the degree of the standard of an electric sign. This distinctive booklet presents circuit board designers and technical managers, and undertaking leaders with useful information on knowing and studying sign integrity functionality.

Analog VHDL

Analog VHDL brings jointly in a single position very important contributions and up to date study leads to this fast paced region. Analog VHDL serves as an exceptional reference, delivering perception into essentially the most tough examine matters within the box.

Extra resources for Bias Temperature Instability for Devices and Circuits

Sample text

Also, contact difficulties arise due to thermal expansion of probe needles and metal pads which make it hard to maintain device biases during the temperature switch. In short, using the thermo chuck for temperature switches suffers from several systematic errors and drawbacks. Our approach to harmonize all conditions and to get rid of the above-described technical difficulties is to make use of the poly-heater technique, cf. Fig. 7a. During stress a certain stress bias (VGS ) is applied to the gate and the (previously calibrated) heater generates an elevated device temperature (TS ) for a defined stress time tS .

O’Connor, B. J. O’Sullivan, G. Groeseneken, “Ubiquitous Relaxation in BTI stressing – New Evaluation and Insights”, inProc. IRPS, pp. 20–27, 2008. 22. A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, G. E. Maes, U. Schwalke, “Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID –VG ”, Microelectronic Engineering, Vol. 72, pp. 267–272, 2004. 23. E. N. Kumar, V. D. Maheta, S. Purawat, A. E. Islam, C. Olsen, K. Ahmed, M. A. Alam and S. Mahapatra, “Material Dependence of NBTI Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast On-The-Fly (UF-OTF) IDLIN Technique”, Technical Digest.

For reliability issues, the source/drain current (ID ) is the preferred reference since it directly reflects the temperature of the interface between the silicon substrate and the gate oxide. This interface is of major interest because most studies suggest this region to be the location of concern for NBTI. In the following, we demonstrate the temperature calibration using a lateral PMOS transistor embedded into two poly-heater wires similar as illustrated in Fig. 1. To record reference values for the poly-heater resistance (RPH ) and the drain current (ID ), we heat the wafer on the thermo chuck from −60 to 300 ◦C and measure RPH and ID at different temperatures, cf.

Download PDF sample

Rated 4.54 of 5 – based on 17 votes

admin