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Extra resources for Silicon VLSI technology: fundamentals, practice, and modeling
Respectively. 305 eV nm. 8/energy (eV). 2, respectively. The term that contains g applies only for p > 3. 5 Kataura plot. From top to bottom: E11 ; E22 ; E11 ; E33 ; E44 ; E22 . Courtesy of Lindsey Brinkmann. 34 CHAPTER 2 CARBON NANOTUBES The above discussion suggests that it is possible to determine the different types of nanotubes in a sample by the optical absorption spectra. However, the overlap between absorption energies coupled with the small effect of environment, including bundling, on the transition has meant that this technique has proven to be of little utility.
Subscripts represent electronic energy bands and superscripts represent semiconducting (S) or metallic (M). For each semiconducting transition Eii, there is a split in energy; that is, absorption occurs at two wavelengths separated by a relatively small energy. 5. 812 nmÀ1, and p ¼ 1, 2, 3, 4, 5 for S S M S S M E11 ; E22 ; E11 ; E33 ; E44 ; E22 ; . , respectively. 305 eV nm. 8/energy (eV). 2, respectively. The term that contains g applies only for p > 3. 5 Kataura plot. From top to bottom: E11 ; E22 ; E11 ; E33 ; E44 ; E22 .
In fact, a qualitative measure of bundling can be made by measuring the intensity of luminescence since quenching will occur if metallic nanotubes are bundled with semiconducting tubes. Raman spectroscopy measures the intensity as a function of the energy difference between light adsorbed and scattered. In most Raman experiments, laser light of one wavelength is used and the output intensity is measured as a function of energy or wavelength of the outgoing light. Normally, the scattered light is measured at an angle of either 90 or 180 relative to the direction of the incoming light.